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NEC's 1 W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE651R479A
FEATURES
* LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel * USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS * HIGH OUTPUT POWER: 30 dBm TYP with 5.0 V Vdc 27 dBm TYP with 3.5 V Vdc * HIGH LINEAR GAIN: 12 dB TYP at 1.9 GHz * LOW THERMAL RESISTANCE: 30C/W
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
1.5 0.2
Source Source Gate
5.7 Max 0.6 0.15
H
X
Drain
0.8 0.15 4.4 Max
Gate
1.0 Max
Drain
1.2 Max
T
8
0.4 0.15
0.8 Max 3.6 0.2
0.2 0.1
DESCRIPTION
NEC's NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
0.9 0.2
5.7 Max
(Bottom View)
TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC
SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain1 Power Added Efficiency Drain Current UNITS dBm dB % mA MIN TYP 29.5 12.0 58 350 MAX
= 25C) TEST CONDITIONS f = 1.9 GHz, VDS = 5 V PIN = +15 dBm, RG = 1 k , IDSQ = 50 mA (RF OFF)
ADD
ID Note: 1. PIN = 0 dBm.
ELECTRICAL CHARACTERISTICS (TC
PART NUMBER PACKAGE OUTLINE SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain1 Power Added Efficiency Drain Current Saturated Drain Current Pinch-Off Voltage Gate to Drain Break Down Voltage
= 25C) NE651R479A 79A UNITS dBm dB % mA A V V C/W -2.0 12 30 50 52 MIN 26.0 TYP 27.0 12.0 60 220 0.7 -0.4 VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 14 mA IGD = 14 mA MAX TEST CONDITIONS f = 1.9 GHz, VDS =3.5 V PIN = +15 dBm, RG = 1 k , IDSQ = 50 mA (RF OFF)2
ADD
ID IDSS VP BVGD RTH
Thermal Resistance, Channel to Case
Notes: 1. PIN = 0 dBm. 2. DC performance is 100% tested. Wafers are sample tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for sample lot.
California Eastern Laboratories
NE651R479A TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC
SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain
1
UNITS dBm dB % mA
MIN
TYP 27.0 14.0 60 230
MAX
= 25C) TEST CONDITIONS
ADD
ID
Power Added Efficiency Drain Current
f = 900 MHz, VDS =3.5 V PIN = +13 dBm, RG = 1 k , IDSQ = 50 mA (RF OFF)
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C)
SYMBOLS VDS VGS IDS IGF IGR PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation2 Channel Temperature Storage Temperature UNITS V V A mA mA W C C RATINGS 8 -4 1.0 10 10 2.5 150 -65 to +150
RECOMMENDED OPERATING LIMITS
SYMBOL VDS GCOMP TCH PARAMETER Drain to Source Voltage Gain Compression1 Channel Temperature UNITS MIN TYP MAX V dB C 3.5 6.0 3.0 +125
Note: 1. Recommended maximum gain compression is 3.0 dB at VDS = 4.2 to 5.5 V.
ORDERING INFORMATION
PART NUMBER QTY 1 kpcs/Reel Bulk, 100 Pcs. Min. NE651R479A-T1-A NE651R479A-A Note: 1. Embossed Tape, 12 mm wide.
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass PWB. TA = +85C
NE651R479A TYPICAL PERFORMANCE CURVES (TA = 25C)
TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE
1.50 1.00
5
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
Total Power Dissipation, PT (W)
Transconductance, Gm (mS)
1.20
0.80
4 RTH = 50C/W 3
0.90
0.60
Drain Current, ID (A)
0.60
0.40
2
0.30
0.20
1
0.00 -1.20
0.00 100
0
25
50
100
150
Gate Voltage, VG (V)
Case/Circuit Temperature (TC)C
DRAIN CURRENT vs. DRAIN VOLTAGE
1.5
30.0
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
1.25
Maximum Available Gain, GMAG (dB)
25.0
Drain Current, ID (A)
1.00 VGS = 0V -0.2V 0.5 -0.4V -0.6V -0.8V 0 0 -1.0V 1 2 3 4 5 6
2.2 V, 50 mA 20.0
4.6 V, 100 mA
0.75
3.5 V, 50 mA 15.0
0.25
10.0
5.0 0.1
0.2
0.5
1.0
2.0
4.0
Drain Voltage, VD (V)
Frequency, f (GHz)
NE651R479A TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50
-20
j25
4.0
j100
-22.5
S12
4.0
-26
j10
-32
0 10
S11 S22 0.5
25
50
100
S21
8
-j10
0.5
14 17.5
-j25 -j50 -j100
Coordinates in Ohms Frequency in GHz VD = 5 V, ID = 100 mA
20
VD = 5 V, ID = 100 mA FREQUENCY
GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.6 3.7 3.8 3.9 4.0 MAG 0.905 0.905 0.904 0.904 0.904 0.903 0.903 0.903 0.902 0.902 0.901 0.900 0.900 0.899 0.898 0.898 0.897 0.896 0.896 0.895 0.895 0.894 0.894 0.893 0.892 0.891 0.890 0.889 0.889 0.888 0.887 0.886 0.886 0.885 0.885 0.882 S11 ANG -171.35 -176.45 179.28 172.25 172.25 169.17 166.26 163.57 160.94 158.40 155.94 153.50 151.13 148.74 146.42 144.10 141.78 139.45 137.20 134.95 132.69 130.42 128.13 125.84 123.53 121.12 118.74 116.40 113.93 111.57 109.17 106.64 1.04.11 101.52 98.85 95.89 MAG 7.390 6.174 5.310 4.650 4.144 3.729 3.393 3.115 2.878 2.675 2.497 2.344 2.207 2.087 1.978 1.882 1.794 1.714 1.641 1.575 1.514 1.458 1.406 1.360 1.315 1.273 1.237 1.199 1.167 1.134 1.105 1.078 1.052 1.027 1.005 0.985 S21 ANG 85.67 81.57 77.91 74.54 71.29 68.22 65.17 62.32 59.48 56.63 53.91 51.18 48.51 45.82 43.18 40.54 37.96 35.31 32.77 30.22 27.72 25.19 22.65 20.17 17.71 15.17 12.88 10.24 7.72 5.26 279 0.35 -2.06 -4.48 -6.81 -9.16 MAG 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 S12 ANG 3.68 1.08 -0.70 -2.57 -4.06 -5.54 -7.10 -8.31 -9.72 -11.05 -12.24 -13.54 -14.55 -16.11 -17.19 -18.30 -19.09 -20.36 -21.58 -22.87 -24.28 -25.45 -26.78 -27.62 -29.24 -30.07 -31.40 -31.97 -33.46 -34.38 -35.71 -37.09 -38.46 -39.84 -40.94 -42.41 MAG 0.664 0.667 0.669 0.669 0.670 0.670 0.671 0.672 0.672 0.673 0.674 0.675 0.675 0.676 0.677 0.679 0.680 0.680 0.682 0.684 0.686 0.687 0.689 0.690 0.693 0.695 0.699 0.699 0.703 0.704 0.708 0.711 0.715 0.719 0.725 0.734 S22 ANG -178.52 178.06 175.09 172.45 170.01 167.69 165.50 163.46 161.46 159.54 157.65 155.81 154.03 152.22 150.61 148.90 147.27 145.62 144.10 142.52 141.08 139.60 138.08 136.71 135.40 133.97 132.83 131.33 130.05 128.87 127.72 126.68 125.68 124.84 124.23 123.96 0.22 0.26 0.31 0.36 0.40 0.45 0.49 0.54 0.59 0.63 0.68 0.73 0.77 0.82 0.87 0.92 0.97 1.02 1.06 1.11 1.14 1.92 1.23 1.28 1.32 1.37 1.45 1.47 1.49 1.54 1.57 1.61 1.62 1.60 1.61 1.63 K MAG1 (dB) 23.77 22.99 22.34 21.76 21.26 20.80 20.39 20.02 19.68 19.36 19.06 18.79 18.52 18.28 18.05 17.62 17.62 16.50 15.73 15.06 14.60 14.07 13.69 13.25 12.90 12.51 12.17 11.83 11.63 11.30 11.07 10.84 10.68 10.51 10.40 10.25
Note: 1. Gain calculation:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE651R479A TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50
4.0
+90 +120
j100
+60
0.5
j25
4.0
+150
S21
+30
j10
0
10
S11 0.5
S22 0.5
0.5
25 50 100
+180
4.0 S12
+0
-j10
4.0
-150
-30
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 50 mA
-120 -90
-60
VD = 3.5 V, ID = 50 mA FREQUENCY
GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 Note: 1. Gain calculation:
MAG = |S21| |S12|
S11 MAG 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 ANG -168.01 -173.64 -178.28 177.73 174.20 170.95 167.90 165.11 162.38 159.77 157.25 154.75 152.33 149.91 147.55 145.21 142.87 140.51 138.25 135.98 133.71 131.45 129.14 126.84 124.54 122.13 119.76 117.42 114.95 112.59 110.20 107.68 105.16 102.57 99.92 97.00 MAG 6.49 5.43 4.68 4.10 3.65 3.29 2.99 2.75 2.54 2.36 2.20 2.07 1.95 1.84 1.74 1.66 1.58 1.51 1.44 1.39 1.33 1.28 1.23 1.19 1.15 1.12 1.08 1.05 1.02 0.99 0.97 0.94 0.92 0.90 0.88 0.86
S21 ANG 86.49 82.00 78.02 74.39 70.90 67.60 64.34 61.32 58.30 55.29 52.40 49.51 46.67 43.82 41.04 38.26 35.55 32.76 30.08 27.39 24.76 22.10 19.43 16.80 14.23 11.57 9.15 6.40 3.77 1.18 -1.40 -3.98 -6.50 -9.02 -11.46 -13.94 MAG 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04
S12 ANG 2.44 -0.91 -3.46 -5.97 -8.08 -10.18 -12.21 -14.08 -15.97 -17.77 -19.54 -21.34 -22.87 -24.84 -26.40 -28.02 -29.38 -31.08 -32.73 -34.35 -36.08 -37.68 -39.43 -40.80 -42.57 -44.05 -45.84 -46.80 -48.59 -49.84 -51.37 -53.04 -54.52 -56.08 -57.48 -59.08 MAG 0.63 0.63 0.63 0.63 0.63 0.63 0.64 0.64 0.64 0.64 0.64 0.64 0.64 0.64 0.65 0.65 0.65 0.65 0.65 0.66 0.66 0.66 0.66 0.66 0.67 0.67 0.68 0.68 0.68 0.68 0.69 0.69 0.70 0.70 0.71 0.72
S22 ANG -173.92 -177.95 178.68 175.74 173.09 170.63 168.31 166.20 164.15 162.17 160.27 158.40 156.62 154.81 153.20 151.49 149.87 148.24 146.74 145.17 143.74 142.27 140.78 139.41 138.12 136.69 135.56 134.07 132.79 131.61 130.47 129.41 128.40 127.55 126.90 126.57
K
MAG1 (dB)
0.17 0.21 0.25 0.29 0.32 0.36 0.40 0.43 0.47 0.50 0.56 0.60 0.64 0.67 0.72 0.77 0.81 0.86 0.89 0.93 0.96 1.03 1.05 1.10 1.13 1.20 1.22 1.27 1.29 1.34 1.36 1.40 1.41 1.44 1.44 1.45
21.59 20.82 20.17 19.59 19.09 18.64 18.23 17.86 17.51 17.19 16.99 16.72 16.46 16.21 15.98 15.86 15.65 15.45 15.26 15.08 14.91 13.82 13.24 12.64 12.17 11.61 11.38 10.94 10.71 10.34 10.14 9.86 9.67 9.47 9.34 9.20
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE651R79A APPLICATION CIRCUIT (2.50 - 2.70 GHz)
VG J3 C3 C9 C11 VD J4 C2 C8 C10 GND
P1 GND
C13 RFIN
C12
RFOUT
J1 C5 C6 U1 TH 8X R1 C1 C4
J2
100637
NE65XXX79A-EV
Contact CEL Engineering for artwork and more detailed information.
.034
J3 VG C13 C11 C9 C3 L = .890 W = .010 L = .874 W = .010 C2 C8 C10 C12
J4 VD
J1 RF Input L = .280 W = .050
C5
R6 NE651R479A C4 L = .260 W = .050 C1
J2 RF Output
1 4 2 1 2 1 1 2 2 2 1 1 1 1 2
TF-100637 MA101J MCR03J201 100A5R1CP150X 100A002CP150X 100A1R5JP150X 491A105K025AS-X GRM40X7R104K025BL GRM40C0G102J050BD NE6510179A 703401 1250-003 2052-5636-02 FD-100637 C2, C3 R1 C1, C5 C4 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB
TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1 100 pF CAP MURATA 0603 200 OHM RESISTOR ROHM CASE A 5.1 pF CAP ATC CASE A 2.0 pF CAP ATC CASE A 1.5 pF CAP ATC CASE A 1uF KEMET 0805 1uF CAP MURATA 0805 1000 pF CAP MURATA IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE NE6500379A-EVAL FABRICATION DRAWING
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
NE651R79A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3.5 V and VDS = 5 V
GAIN AND SATURATED POWER vs. FREQUENCY
18 17 16 15 29 30
GAIN AND SATURATED POWER vs. FREQUENCY
18 17 33
Saturated Power, POUT (dBm)
16 15
32
14 13 12 11 10 9 8 1.9 1.92 1.94 Gain (db) 3.5 V at 50 mA Gain (db) 3.5 V at 250 mA POUT (db) 3.5 V at 50 mA POUT (db) 3.5 V at 250 mA 1.96 1.98 2.00 2.02
28
14 13 12 11 10 9 8 1.9 1.92 1.94 Gain (db) 5 V at 50 mA Gain (db) 5 V at 250 mA POUT (db) 5 V at 50 mA POUT (db) 5 V at 250 mA 1.96 1.98 2.00 2.02
31
27
30
26
29
25
28
Frequency, f (GHz)
Frequency, f (GHz)
POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER
20 18 60 16 14 50 Gain, IDSQ = 50 mA PAE, IDSQ = 50 mA Gain, IDSQ = 100 mA PAE, IDSQ = 100 mA Gain, IDSQ = 250 mA PAE, IDSQ = 250 mA FC = 1.96 GHz, VDS = 3.5 V 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 70
POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER
20 70
Power Added Efficiency, PAE (%)
60 16 14 50 Gain, IDSQ = 50 mA PAE, IDSQ = 50 mA Gain, IDSQ = 100 mA PAE, IDSQ = 100 mA Gain, IDSQ = 250 mA PAE, IDSQ = 250 mA FC = 1.96 GHz, VDS = 5 V 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
12 10 8 6 4 2 0
12 10 8 6 4 2 0
Output Power, POUT (dBm)
Output Power, POUT (dBm)
Third Order Intermodulation Distortion, IM3 (dBc)
20 10 0 -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 FC = 1.96 GHz, POUT = Each Tone VDS = 3.5 V
Third Order Intermodulation Distortion, IM3 (dBc)
THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER
THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER
20 10 0 -10 -20 -30 -40 -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 IDSQ = 50 mA IDSQ = 100 mA IDSQ = 250 mA FC = 1.96 GHz, POUT = Each Tone VDS = 5 V
IDSQ = 50 mA IDSQ = 100 mA IDSQ = 250 mA
Total Output Power, POUT (dBm)
Total Output Power, POUT (dBm)
Power Added Efficiency, PAE (%)
18
Gain, GA (dB)
Gain, GA (dB)
Saturated Power, POUT (dBm)
Gain, G (dB)
Gain, G (dB)
NE651R479A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 5 V, f = 2.66 GHz
34 32
Output Power, POUT (dBm)
Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz Instantaneous Bandwidth when biasing at 5 V 50 mA
Third Order Intermodulation Distortion, IM3 (dBc)
OUTPUT POWER vs. INPUT POWER
THIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER
-20 Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz Instantaneous Bandwidth when biasing at 5 V 50 mA
-25
30 28 26 24 20 18 16 8 10 12 14 16 18 20 22 24 26 28 50 mA 150 mA 300 mA 100 mA 200 mA 350 mA
-30
-35
-40
-45
50 mA 150 mA 300 mA 16 18 20 22 24
100 mA 200 mA 350 mA 26 28
-50
Input Power, PIN (dBm)
Total Output Power, POUT (dBm)
NE651R479A RECOMMENDED P.C.B. LAYOUT (Units in mm)
4.0 1.7
Drain 5.9 1.2 0.5
Gate 1.0
Source through hole 0.2X33 0.5 6.1 0.5
RECOMMENDED SOLDERING CONDITIONS1
This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your CEL sales representative. SOLDERING METHOD Infrared Reflow SOLDERING CONDITIONS Package peak temperature: 235 C or below Time: 30 seconds or less (at 210 C) Count: 2, Exposure limit: none Partial Heating PIN temperature: 260 C Time: 5 seconds or less (per pin row) Exposure limit: none Note: 1. Caution: Do not use different soldering methods together (except for partial heating). RECOMMENDED CONDITION SYMBOL IR35-00-2
NE651R479A NONLINEARMODEL
SCHEMATIC
DRAIN Ldpkg L=0.001 nH
GATE
Lspkg L=0.001 nH
Q1
Ld L=0.55 nH
Lg L=1.45 nH
Cdspkg C=0.1 pF
Cdspkg C=0.1 pF
FETNONLINEARMODELPARAMETERS
Parameters TOSC V LPHA A ETA B VTO Q1 0.9255 1.5 0 0 Parameters RG RD RGMET KF AF TNOM XTI EG RS Q1 1.0 0.05 0 0 1 27 3 1.43 0 0.2
(1)
Lspkg L=0.001 nH SOURCE
AMMA G Q
0.964
AMMADC(2) 0.002 G ELTA D VBI IS N 1.5 0 0.6 1 0
1e-16 0 30e-12 60
BETATCE FFE
VTOTC
0 1
UNITS
Parameter Units nanohenries ohms picofarads capacitance inductance resistance
RIS
RID TAU CDS RDB CBS CGSO(3) GDO(4) C ELTA1 D ELTA2 D FC VBR
0.2e-12 100e-12 1.1e-12 0.3 0.5 0.2 Infinity 14e-12
MODELRANGE Frequency: 0.5to4GHz Bias: VDS=2.2Vto4.6V,ID=50mAto350mA Date: 6/02/2003

(1)SeriesIVLibraTOMModel TheparameterinLibracorrespondstotheparameterinPSpice: (2)GAMMADC GAMMA (3)CGSO CGS (4)CGDO CGD
11/02/2006
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.

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